ALPHARETTA, Ga., Dec. 16, 2025 /PRNewswire/ -- Flip Electronics and Ampleon continue to extend the supply of Ampleon's Legacy LDMOS portfolio of high-performance RF transistors to customers worldwide.

Tower Semiconductor has introduced its new 300mm 65nm 3.3V-based BCD Power Management Platform (PML), enhancing its existing 5V-based solutions that are currently in high-volume production. This ...

Abstract: Lateral diffused metal-oxide-semiconductor (LDMOS) devices are vulnerable to single-event burnout (SEB) in radiation environments, potentially leading to catastrophic failure in high-voltage ...

“We chose to transfer Ampleon’s Legacy LDMOS portfolio to Flip Electronics because they have been very successful in extending the lifecycle of semiconductors through inventory acquisition, wafer ...

Abstract: The Lateral Diffused Metal Oxide Semiconductor (LDMOS) is vulnerable to Single-Event Burnout (SEB) effect in the radiation environment, which is challenging for the design of high-voltage ...

This article is part of the TechXchange: Gallium Nitride (GaN). NXP rolled out a family of gallium-nitride (GaN)-based RF power amplifiers (PAs) that uniquely leverages top-side cooling to reduce the ...

M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...

There is no doubt that 5G’s higher bandwidth, lower latency and higher availability make it well suited for a range of applications. However, the higher-frequency bands, particularly millimeter-wave ...